Influence of Schottky contact on the C-V and J-V characteristicsof HTM-free perovskite solar cells

Citation:

Y. Huang, Aharon, S. , Rolland, A. , Pedesseau, L. , Durand, O. , Etgar, L. , and Even, J. . 2017. “Influence Of Schottky Contact On The C-V And J-V Characteristicsof Htm-Free Perovskite Solar Cells”. Epj Photovoltaics, 2017,8, Pp. 85501.

Abstract:

Abstract The influence of the Schottky contact is studied for hole transport material (HTM) freeCH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basiccurrent-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimentaldata. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottkycapacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV areproposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.