@article {19189,
	title = {Influence of Schottky contact on the C-V and J-V characteristicsof HTM-free perovskite solar cells},
	journal = {EPJ Photovoltaics},
	volume = {2017,8},
	year = {2017},
	pages = {85501},
	abstract = {Abstract The influence of the Schottky contact is studied for hole transport material (HTM) freeCH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basiccurrent-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimentaldata. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottkycapacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV areproposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.},
	author = {Y. Huang and S. Aharon and A. Rolland and L. Pedesseau and O. Durand and L. Etgar and J. Even}
}
