@article { ISI:000272895100037,
	title = {Patterned electrode vertical field effect transistor fabricated using block copolymer nanotemplates},
	journal = {Applied Physics Letters},
	volume = {95},
	number = {21},
	year = {2009},
	note = {[["fid":"23645","view_mode":"default","type":"media","attributes":"height":"237","width":"831","style":"width: 526px; height: 150px;","alt":"20. patterned electrode for vertical FET","title":"20. patterned electrode for vertical FET","class":"media-element file-default"]]},
	month = {NOV 23},
	pages = {213301},
	publisher = {AMER INST PHYSICS},
	type = {Article},
	address = {CIRCULATION \& FULFILLMENT DIV, 2 HUNTINGTON QUADRANGLE, STE 1 N O 1, MELVILLE, NY 11747-4501 USA},
	abstract = {We report the design and implementation of a vertical organic field effect transistor which is compatible with standard device fabrication technology and is well described by a self consistent device model. The active semiconductor is a film of C(60) molecules, and the device operation is based on the architecture of the nanopatterned source electrode. The relatively high resolution fabrication process and maintaining the low-cost and simplicity associated with organic electronics, necessitates unconventional fabrication techniques such as soft lithography. Block copolymer self-assembled nanotemplates enable the production of conductive, gridlike metal electrode. The devices reported here exhibit On/Off ratio of 10(4).},
	keywords = {elemental semiconductors, Fullerenes, nanolithography, organic field effect transistors, polymer blends, Self-assembly, semiconductor thin films, soft lithography},
	issn = {0003-6951},
	doi = {10.1063/1.3266855},
	author = {Ben-Sasson, Ariel J. and Avnon, Eran and Ploshnik, Elina and Globerman, Oded and Shenhar, Roy and Frey, Gitti L. and Tessler, Nir}
}
