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Trapped-Ion Quantum Logic with Global Radiation Fields | Alex Retzker's Group

Trapped-Ion Quantum Logic with Global Radiation Fields

Citation:

S Weidt, Randall, J, Webster, SC , Lake, K, Webb, AE , Cohen, I, Navickas, T, Lekitsch, B, Retzker, A, and Hensinger, WK . 11/23/2016. “Trapped-Ion Quantum Logic With Global Radiation Fields”. Physical Review Letters, 117, 22. https://doi.org/10.1103/PhysRevLett.117.220501.

Abstract:

Trapped ions are a promising tool for building a large-scale quantum computer. However, the number of required radiation fields for the realization of quantum gates in any proposed ion-based architecture scales with the number of ions within the quantum computer, posing a major obstacle when imagining a device with millions of ions. Here, we present a fundamentally different approach for trapped-ion quantum computing where this detrimental scaling vanishes. The method is based on individually controlled voltages applied to each logic gate location to facilitate the actual gate operation analogous to a traditional transistor architecture within a classical computer processor. To demonstrate the key principle of this approach we implement a versatile quantum gate method based on long-wavelength radiation and use this method to generate a maximally entangled state of two quantum engineered clock qubits with fidelity 0.985(12). This quantum gate also constitutes a simple-to-implement tool for quantum metrology, sensing, and simulation.
Last updated on 07/04/2021