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Manufacturer and model:
Elionix E-Beam Lithography System, Elionix, Japan ELS-G100
General Information:
High resolution, high speed e-beam lithography down to nanometers
Key Features:
- Acceleration Voltage = 100kV, Beam Current from 20pA to 100nA
- Sample Size: up to 200mm diameter
- 100MHz Pattern Generation
- Ultra High Beam Position Accuracy - 20bit DAC + Laser Interferometric Stage
- Sample Pre-Alignment Station
- Automatic Load-Lock
Applications:
Ultra Fine Lithography down to Nanometer Scale
Materials:
Si, GaAs, InP, SiO2, Al2O3, Metallic Layers, etc
Start of Operation Date:
December 2018