@article {19418,
	title = {High Open Circuit Voltage in Sb2S3/Metal Oxide-Based Solar Cells},
	journal = {J. Phys. Chem. C},
	volume = {2015, 119},
	year = {2015},
	pages = {12904-12909},
	abstract = {This paper presents for the first time Sb2S3-based solar cells operating onscaffold film. The scaffolds studied are Al2O3 and ZrO2, for which no electron injectionfrom the Sb2S3 to the Al2O3 or ZrO2 is possible. As a result, one of the highest open circuitvoltages (Voc) of 0.712 V was observed for this solar cell configuration. Electron dispersivespectroscopy (EDS) was performed, revealing complete pore filling of the Sb2S3 into themetal oxide pores (e.g., Al2O3 or ZrO2); the complete pore filling of the Sb2S3 isresponsible for the photovoltaic performance (PV) of this unique solar cell structure. Inaddition, intensity modulated photovoltage and photocurrent spectroscopy (IMVS andIMPS) were performed to extract the electron diffusion length. Electron diffusion length inthe range of 900 nm to 290 nm (depending on the light intensity) was observed, whichfurther supports the operation of metal oxide/Sb2S3 solar cell configuration. Moreover, theAl2O3-based cells have longer electron diffusion length than the TiO2-based cells,supporting the higher open circuit voltage of the noninjected metal oxide-based cells. Thiswork demonstrates the potential of Sb2S3 to gain high voltage and to perform on a scaffoldsubstrate without requiring electron injection.},
	author = {Tzofia Englman and Eyal Terkieltaub and Etgar Lioz}
}
